Abstract
TiO2 thin films have been deposited at different concentration ofCdO of (x= 0.0, 0.05, 0.1, 0.15 and 0.2) Wt. % onto glass substratesby pulsed laser deposition technique (PLD) using Nd-YAG laserwith λ=1064nm, energy=800mJ and number of shots=500. Thethickness of the film was 200nm. The films were annealed todifferent annealing (423 and 523) k. The effect of annealingtemperatures and concentration of CdO on the structural andphotoluminescence (PL) properties were investigated. X-raydiffraction (XRD) results reveals that the deposited TiO2(1-x)CdOxthin films were polycrystalline with tetragonal structure and manypeaks were appeared at (110), (101), (111) and (211) planes withpreferred orientation along 2Ɵ around 27.30. The results ofphotoluminescence (PL) emission show that there are two peakspositioned are around 320 nm and 400 nm for predominated peakand 620 nm and 680 nm for the small peaks.
Highlights
Titanium dioxide has been one of the most extensively studied oxides because of its remarkable optical and electronic properties [1,2,3]
With the pulsed laser deposition method, thin films are prepared by the ablation of one or more targets illuminated by a focused pulsed-laser beam
Figs. (1-a, b, c) show the X-ray diffraction (XRD) patterns obtained for TiO2(1-x)CdOx thin films deposited on glass substrate with thickness of 200 nm by pulse laser deposition method at different concentration of Cadmium oxide (CdO) x= (0.0, 0.05, 0.1, 0.15, 0.2) Wt. % prepare at RT and annealed to different annealing temperatures (423 and 523) K, respectively
Summary
Titanium dioxide has been one of the most extensively studied oxides because of its remarkable optical and electronic properties [1,2,3]. With the pulsed laser deposition method, thin films are prepared by the ablation of one or more targets illuminated by a focused pulsed-laser beam This technique was first used by smith and Turner in 1965 [20] for the preparation of semiconductor and dielectric thin films and was established due to the work of Dijkkamp and coworkers [21] on high-temperature superconductors in 1987. TiO2(1-x)CdOx films were deposited on glass slides substrates of (10×10 mm) at room temperature and different concentration of CdO. The thickness of TiO2(1-x)CdOx thin film was measured using an optical interferometer method employing He-Ne laser 0.632 μm with incident angle 45° This method depends on the interference of the laser beam reflected from thin film surface and substrate, the films thickness t was determined using the following formula [25]:. Where x is fringe width, Δx is the distance between two fringes and λ is wavelength of laser He – Ne (632.8nm)
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