Structural and photoelectrical characteristics of Si/6H-SiC heterojunctions prepared by hot-wall chemical vapor deposition

Abstract

Based on a potential application for the Si/SiC heterojunction to realize light control of SiC devices, structures and electrical properties of boron-doped silicon layer deposited on the n-type 6H-SiC substrate by hot-wall chemical vapor deposition were investigated in this paper.X-ray diffraction analysis and scanning electronic microscopy were used to characterize the crystal structure and morphology of the deposited silicon layer. Results of I–V and C–V measurements indicated that the heterojunction was abrupt manifesting obvious p–n junction properties. During the I–V measurement, the Si/SiC heterojunction developed a remarkable photovoltaic effect under illumination condition.