Abstract
Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A3IIIB4VI (100)c(2 × 2) surface phases and thin layers of gallium or indium selenides A2IIIB3VI (100) on surfaces of different AIIIBV(100) semiconductors are discussed within the vacancy model of surface atomic structure.
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