Abstract
The surface of GaAs(111) and InAs(111) substrates has been investigated by transmission and scanning electron microscopy after thermal treatment in selenium vapor. A pseudomorphic growth of single-crystal phases of indium selenide In2Se3(111) and gallium selenide Ga2Se3(111) is found; these compounds are crystallized into a sphalerite lattice with ordered stoichiometric cation vacancies. A model of an atomic surface is proposed for the In2Se3(111) and Ga2Se3(111) structures. The reconstruction of the (√3 × √3)-R30° surface of GaAs(111) and InAs(111) after treatment in Se vapor is considered within this model.
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