Abstract
Ce doped ZnO thin films were prepared on a glass substrate by sol-gel spin coating technique. Effect of post annealing temperature from 250 to 450 °C on structural and optical properties of Ce doped ZnO thin films were studied. The influence of temperature on transparency, bandgap and crystallite size of Ce doped ZnO was observed. The nano thin films were characterized by X-ray Diffractometer and UV-Vis Spectrophotometer. Crystallinity of the deposited thin films was found to be improved with temperature. Increasing the post annealing temperature (250°–450 °C), increases the grain size of the samples gradually from 15.41 to 26.54 nm. In addition to the effect of post annealing temperature, the influence of average transmission, absorption, and band gap of the Ce doped ZnO thin films was investigated for optoelectronics applications.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call