Abstract
The nanocrystalline cubic SiC (nc-3C–SiC) films were deposited on quartz chips from SiH4–C2H2–H2 mixture by hot wire chemical vapor deposition. During the deposition, the total gas pressure and the substrate temperature were kept at 800Pa and 350°C. The films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and UV–VIS–NIR spectroscopy. It was found that the film structure changed from microcrystalline Si to nc-3C–SiC between 1700°C and 1800°C. The optical band gap of deposited films increased from 1.6 to 2.5eV by varying the filament temperature from 1600°C to 2000°C. The intensities of CH and SiC bonds were found to be the key parameters, controlling their optical and structural properties. Furthermore, the crystallinity of SiC films was promoted with increasing the filament temperature, due to the large amount of H radicals which etches the amorphous network structure and the grain boundaries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.