Abstract
MgxZn1−xO (MZO) thin films prepared by an rf magnetron sputtering technique arereported. The films were grown at room temperature and at relativelylow rf power of 50 W. MZO thin films were found to possess preferredc-axis orientation and exhibited hexagonal wurtzite structure of ZnOup to a Mg concentration of 42 mol%. A small variation in thec-axis lattice parameter of around 0.3% was observed with increasing Mg composition,showing the complete solubility of Mg in ZnO. The band gap of the MZO films in thewurtzite phase varied linearly with the Mg concentration and a maximum band gap∼4.19 eV wasachieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mgcontent. The observed optical dispersion data are in agreement with the single oscillatormodel. A photoluminescence study revealed a blue shift in the near band edge emissionpeak with increasing Mg content in the MZO films. The results show the potential of MZOfilms in various opto-electronic applications.
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