Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

Abstract

La x Lu 1 − x O 3 thin films were deposited on 300 mm silicon wafers by physical vapor deposition and fabricated into field-effect transistors using a gate-first process flow. The films were characterized using transmission electron microscopy, Rutherford backscattering spectrometry, and synchrotron x-ray diffraction. The results show the films remain amorphous even at temperatures of 1000 °C. The dielectric properties of LaxLu1−xO3 (0.125≤x≤0.875) thin films were evaluated as a function of film composition. The amorphous LaxLu1−xO3 thin films have a dielectric constant (K) of 23 across the composition range. The inversion thickness (Tinv) of the LaxLu1−xO3 thin films was scaled to <1.0 nm.