Abstract
β-Ga2O3 films have been prepared on MgAl2O4 (100) substrates at different temperatures (550–700°C) by metal–organic chemical vapor deposition (MOCVD). Microstructure analysis revealed that the sample deposited at 650°C was the single crystal epitaxial film with the best crystallinities. The epitaxial relationship was β-Ga2O3 (100) || MgAl2O4 (100) with β-Ga2O3 [001] || MgAl2O4 〈011〉. A schematic diagram was proposed to explain the domain structure in the film layer. The average transmittance for the films in the visible range was over 90%. An ultraviolet (UV)–green photoluminescence (PL) from about 350–600nm was observed at room temperature (RT). The corresponding PL mechanisms were investigated.
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