Abstract
Abstract We have studied structural and optical properties of self-assembled Cd 0.6 Zn 0.4 Te/ZnTe quantum dots (QDs) grown on Si(1 0 0) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (1 0 0) orientation. The atomic force microscopy images showed that Cd 0.6 Zn 0.4 Te/ZnTe QDs were formed on Si(1 0 0) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd 0.6 Zn 0.4 Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd 0.6 Zn 0.4 Te/ZnTe QDs grown on Si(1 0 0) substrates.
Published Version
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