Abstract
We have investigated the influence of CdTe thickness on the structural and optical properties of CdTe/ZnTe quantum dots (QDs) on Si substrates using molecular beam epitaxy and atomic layer epitaxy (ALE). Atomic force microscopy images reveal that CdTe QDs are formed after being embedded in an undoped ZnTe matrix, which was controlled by the ALE method. As the size of QDs increases, the photoluminescence (PL) peak shifts towards lower energy and the full-width-at-halfmaximum increases. Through temperature-dependent PL, the increase in activation energy with increasing QD size was confirmed. From this study, the different structural and optical properties of QDs deposited on Si substrates could be understood.
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