Abstract
AbstractAly Inx Ga1–x –y N quantum dots have been grown by MOVPE on (0001) sapphire substrates. We investigated the dependence of the self‐assembled quantum dot density and height on the growth conditions: the growth temperature, the amount of deposited material, and the growth rate interruption. A maximum dot density of 4 × 1010 cm–2 was achieved. The optical properties were studied after overgrowing of the QDs with a GaN cap layer. We observed very intense luminescence in the region between 2.4 and 2.8 eV and decay times of 1.8 ns under resonant excitation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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