Abstract
Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.
Highlights
Self-assembled InAs quantum dots (QDs) grown on GaAs substrate have generated a momentous interest in the lastR
Motivated by the above ideas, we report the effect of growth temperature and InAs coverage on the formation of InAs QDs on Ge substrate having a GaAs buffer layer
When polar material (GaAs, InAs) is epitaxially grown on non-polar material (Ge), it often leads to structural defects known as anti phase domains (APDs) which creates deep levels inside the forbidden band and acts as strong scattering centers [17, 18]
Summary
Self-assembled InAs quantum dots (QDs) grown on GaAs substrate have generated a momentous interest in the lastR. Self-assembled InAs quantum dots (QDs) grown on GaAs substrate have generated a momentous interest in the last Motivated by the above ideas, we report the effect of growth temperature and InAs coverage on the formation of InAs QDs on Ge substrate having a GaAs buffer layer.
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