Abstract
Self-assembled InAs quantum dots (QDs) were grown on vicinal (100) GaAs substrate. Effect of InAs coverage and growth temperature was studied to optimize QDs for laser applications. The density and size distribution of QDs varied with the change in InAs coverage and growth temperature. Growth temperature was varied from 400 to 450°C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). Optimum growth temperature was found to be 420°C. Density of QDs was first increased and then decreased with increase in InAs coverage. Linear increase in size and height of QDs was observed with increase in both growth temperature and InAs Coverage. It was observed that these two parameters play crucial role in optimization of uniform QDs.
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