Abstract
We report, in this paper, the formation of the equilibrium TbSi2 phase and its associated surface morphology induced by high-current Tb-ion implantation into Si with applying a metal vapor vacuum arc ion source. It was found that continuous TbSi2 layers could be obtained at relatively low formation temperature ranging from 180 to 340°C and that the surface morphology varied with the variation of the implantation parameters. The formation mechanism of the equilibrium TbSi2 phase as well as its continuous layer is proposed in terms of the temperature rise caused by ion beam heating and variations of the ion dose in the high-current metal ion implantation process.
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