Structural and electrical properties of ZnO/Zn0.85Mg0.15O thin film prepared by pulsed laser deposition

Abstract

The electrical transport properties are the key factors to determine the performance of ZnO-based quantum effect device. ZnMgO is a typical material to regulate the band of ZnO. In order to investigate the electrical properties of the interface of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films, three kinds of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films have been fabricated with different thickness. After comparing the structural and electrical properties of the samples, we found that the independent Zn[Formula: see text]Mg[Formula: see text]O hexagonal wurtzite structure (002) peak can be detected in XRD spectra. Hall-effect test data confirmed that the two-dimensional electron gas (2DEG) became lower because of the decrease of thickness of Zn[Formula: see text]Mg[Formula: see text]O films, increase of impurity scattering and lattice structure distortion caused by the increase of Mg content.