Abstract
The authors have grown Li-doped p-type ZnMgO films on glass substrates with different Mg contents (11–28at.%) by pulsed laser deposition. Hall measurements suggest that the resistivity increases with Mg concentration. Acceptor levels related to LiZn located at about 150 and 174meV above the valence band maximum were discriminated in photoluminescence spectra for Li-doped Zn0.89Mg0.11O and Zn0.72Mg0.28O films, respectively. The conversion of donor-acceptor pair to a free-to-neutral-acceptor (e,A0) transition was also observed in Zn0.89Mg0.11O:Li film. The optical band gap and the acceptor binding energy increase with increase of Mg content in the films, which leads to reduction in the hole concentration and increase in the resistivity.
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