Structural and electrical properties of SrBi 2Nb 2O 9 thin films prepared by chemical aqueous solution at low temperature

Abstract

SrBi 2Nb 2O 9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO 2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700°C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 μm in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization ( P r) and coercive field ( E c) were 5.6 μC/cm 2 and 100 kV/cm, respectively.