Structural and electrical properties of SrBi 2(Ta 0.5Nb 0.5) 2O 9 thin films

Abstract

SrBi 2(Ta 0.5Nb 0.5) 2O 9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO 2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 °C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization ( P r) and coercive field ( E c) were 5.1 μC/cm 2 and 96 kV/cm, respectively.