Abstract
β-FeSi 2 bulk single crystals were grown using a temperature gradient solution growth (TGSG) process in Sb solvent. The microstructural and electrical properties of the β-FeSi 2 were then characterized. Rectangular-shaped single crystals were basically obtained with facetted crystallographic planes having the predominant growth direction of β-FeSi 2 [011]. No evidence for the formation of 90° order domains around the a-axis, domain boundaries and long period structures was observed by transmission electron microscopy (TEM). It was also found that the crystal shows n-type behavior, and that the donor ionization energy deduced from the temperature dependence of the electron concentration is approximately 0.12–0.15 eV. The nature of defects will be discussed along with the photoconductivity and the electron spin resonant (ESR) measurements.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
