Abstract
β-FeSi 2 bulk single crystals were grown by temperature gradient solution growth using Sb solvent. Basically, rectangular shaped crystals were obtained with facetted crystallographic planes. The structural and electrical properties at room temperature are examined. It is confirmed by X-ray diffraction measurement that the formation of 90° order domains around the a-axis is suppressed. The β-FeSi 2 crystal shows a resistivity of 0.1 Ω cm with n-type conductivity. For comparison, the formation of β-FeSi 2 crystals was also examined using Fe and Si as starting materials.
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