Temperature Gradient Solution Growth

Abstract

This article reviews the Temperature Gradient Solution (TGS) growth method (sometimes also named Synthesis, Solute Diffusion technique) of preparing bulk crystals of III–V semiconductors. This method is an interesting alternative to the conventional Liquid Encapsulation Czochralski (LEG) technique because the properties of this material are similar to those of epitaxial layers. Therefore, production of devices is possible without using liquid or vapour phase epitaxy. The principle of the method is described using GaP as an example. Experimental techniques for growing single crystals with controlled doping are thoroughly discussed. Growth of other binary compounds (e.g. InP) is also described. A variation of the TGS method can be applied to the growth of ternary compounds (mainly In1-x GaxP). The defect densities and electrical properties of TGS grown crystals are compared to the corresponding properties of LEC material. Preparation and properties of LED’s based on TGS grown materials are treated in detail With further development work the TGS growth method may become competitive with the standard production process (LEC plus epitaxy) for LED materials.