Abstract
AbstractUsing micro‐beam X‐ray diffraction (XRD), small c‐axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO‐GaN), which is a suitable underlying layer for realizing a reliable GaN‐based blue‐violet laser diode. By analyzing the micro‐scale structure of ELO‐GaN without coalescence and the ambient‐temperature dependence of the tilting angle, we conclude that the small c‐axis tilting is caused by compressive stress in the seed region of ELO‐GaN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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