Abstract
We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10 −2 and 4.5×10 −2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10 −1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be 3P 2 cluster formation growth, which depends on growth temperature and planar crystalline structure.
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