Abstract
We have investigated the spatial composition variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. At growth temperature of 540°C, no difference between In and Ga growth properties is observed. At 500°C, we observe the onset of new crystalline planes on the side walls of the pre-patterned structure. Finally, we show how these planes are related to a measured strong spatial composition variation.
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