Abstract
ABSTRACTWe present an investigation on the spatial compositional variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. Neighboring regions with 190 meV bandgap discontinuity are observed with the growth at 500°C. The development of laser structures on V-grooves that incorporate these lateral heterostructures is achieved by controlling the growth temperature during growth
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