Strong Photoluminescence Emission from GaN on SrTiO3

Abstract

GaN layers are grown on SrTiO3(100) substrates by gas source molecular beam epitaxy (MBE). From X-ray diffraction (XRD) measurements it is obvious that GaN on SrTiO3 has strong c-oriented nature and polycrystalline structure. However, it shows strong and narrow photoluminescence (PL) emission without deep level emission. Compared with polycrystalline GaN on silica glass, the PL peak is slightly red-shifted, which agrees with the XRD result. The results suggest the possibility of the growth of strong PL emission GaN on ferroelectric or magnetic oxide layers grown on SrTiO3 substrate to produce new functional devices.