Stress Induced Leakage Currents and Charge Trapping in Thin Zr- and Hf-Silicate Layers

A Paskaleva,M Lemberger,A.J Bauer

doi:10.1109/icmel.2006.1651025

Stress Induced Leakage Currents and Charge Trapping in Thin Zr- and Hf-Silicate Layers

A Paskaleva, M Lemberger + Show 1 more

https://doi.org/10.1109/icmel.2006.1651025

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Publication Date: Jan 1, 2006

Citations: 4

Affiliation: Georgi Nadjakov Institute of Solid State Physics, University of Erlangen-Nuremberg

#Stress Induced Leakage Current #Hf-Silicate Layers + Show 8 more

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Abstract

In this paper, reliability aspects of thin Zr- and Hf-silicate layers are addressed by analyzing the stress induced leakage current (SILC) and charge trapping during constant voltage stress (CVS) and constant current stress (CCS). Voltage polarity and temperature effects on the degradation of the layers are also studied. SILC is found to have a transient component and its recovery is explained by the trapping/detrapping of traps participating in Poole-Frenkel conduction

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