Abstract
A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si1-xGex layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si1-xGex layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 µm has been obtained, which shows the great potential of this structure in Si-based device applications.
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