Strained layer and lattice matched transverse junction stripe quantum well lasers for continuous room temperature operation

Abstract

Two new Transverse Junction Stripe (TJS) laser structures using lattice matched AlGaAsGaAs and strained layer InGaAsGaAsAlGaAs quantum wells have been demonstrated. The lasers are grown by molecular beam epitaxy and the junction is produced by a two step zinc diffusion and anneal. The diffusion process produces a lateral heterojunction (in addition to the as grown heterojunctions) by diffusion enhanced compositional disordering of the quantum well active region. Both lasers exhibit low thresholds (20–30 mA, continuous wave, room temperature) and single mode operation. The excellent performance of both lasers indicates that high quality lateral +-p-n junctions and heterojunctions can be formed by zinc diffusion enhanced compositional disordering of both lattice matched GaAsAlGaAs and strained layer InGaAsGaAsAlGaAs quantum well structures. The threshold current versus temperature, emission wavelength versus annealing time and preliminary lifetime data are presented.