Abstract
The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by apeak finding technique using high resolution transmission electron microscopyimages. We find that nanowires with a diameter of about 20 nm show a 10 nmstrained area over the InAs/InP interface and the rest of the wire has a relaxedlattice structure. The lattice parameters and elastic properties for the wurtzitestructure of InAs and InP are calculated and a nanowire interface is simulated usingfinite element calculations. Both the method and the experimental results arevalidated using a combination of finite element calculations and image simulations.
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