Abstract
In this study, we investigated strain-induced effects in p-type Si whiskers at low temperatures of 4.2–70K in DC and AC currents. Si whiskers with boron concentrations close to the metal–insulator transition (MIT) were investigated. We determined the influence of strain (up to 5×10–3 r.u.) on the active and reactive resistivity, thereby detecting inductive and capacity changes. We discuss the low temperature transport of charge carriers in Si boron-doped whiskers. The current was found to pass through the subsurface of the whiskers, which was accompanied by the capture and reemission of charge carriers by Tamm states. A high sensitivity sensor with a gauge factor of GF4,2K~15,000 is proposed for the measurement of strain at an AC frequency of 100kHz at low temperatures, including T=4.2K.
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