Abstract
We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures which are optimised for operation in the terahertz frequency range, and compare these to current state of the art double barrier structures realised in the literature. We consider the effect of strain introduced due to the large lattice mismatch of the substrate, quantum well and potential barrier materials and describe designs with strain compensated active regions. Constraints have been imposed on the designs to minimise charge accumulation in the emitter quantum well which is often associated with more complex triple barrier structures. The use of a triple barrier structure suppresses the off resonance leakage current, thus increasing the maximum output power density, with � 3 mW�m
Highlights
T HE frequency range from 300 GHz to 10 THz, typically known as the terahertz region of the electromagnetic spectrum is of great interest due to its potential applications
We report a theoretical optimization study of triple barrier Resonant tunneling diodes (RTDs), which build on the current stateof-the-art double barrier designs, whilst still considering the practical growth requirements for strain compensation of the InGaAs/aluminum arsenide (AlAs) material system
The potential barrier material has been chosen as aluminum arsenide (AlAs) to maximize the height of the confining potential barriers compared to the indium gallium arsenide composition (Inx Ga1−x As) of the emitter quantum well (WE)
Summary
T HE frequency range from 300 GHz to 10 THz, typically known as the terahertz region of the electromagnetic spectrum is of great interest due to its potential applications. Enhanced security imaging [1], which exploits the unique “terahertz fingerprint” of many nonconducting materials to identify hidden objects, ultrafast wireless communications for short range high-capacity line of sight communication [2], and noninvasive highly sensitive medical imaging due to the nonionizing nature of the terahertz radiation [3] are a few of the potential applications offered by radiation in this frequency band. Despite the development of several optical and electrical devices, which operate in the THz frequency range, the applications and commercial opportunities are still limited.
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