Theoretical analysis of resonant tunneling in triple‐barrier structures under electric fields

Abstract

AbstractAssuming a practical device application of resonant tunneling in a triple‐barrier structure, equations for theoretical analysis of the tunneling transmission coefficient and the resonance condition are derived with regard to the tunneling phenomena in asymmetric triple‐barrier structures in the presence of an applied bias. From the numerical analysis results, an interesting phenomenon not observed in structures with two or fewer barriers is found. As the bias voltage is increased, the transmission peak value of the resonant spectrum, which initially decreases, begins to increase again and several peaks with a spectral value of 1 (unity resonance) appear. At that time, the resonance condition is studied. Further, the effect of the tunneling transmission characteristics of triple‐barrier structures on the voltage–current relationship in a triple‐barrier resonant tunneling diode is studied. By means of the equations derived here, the resonant bias voltage in the triple‐barrier structure can be determined. The conclusions derived in this paper are considered useful for the design of resonant tunneling devices using triple‐barrier structures. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(12): 10–19, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.10075