Abstract
The strain and relaxation of InAs and InGaAs films grown on GaAs(001) have been examined by the x-ray standing wave and extended x-ray absorption fine-structure techniques. While 1 monolayer (ML) films of both InAs and InGaAs are found to be tetragonally distorted in accordance with the prediction of macroscopic-elastic theory, thicker InAs films are found to collapse to their natural-lattice constant past a critical thickness Tc, of ∼2 ML’s. By 8 ML’s, bond-length strain is no longer evident, and a large degree of structural disorder is observed.
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