Abstract
The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carbon and gallium ions (5×1014 cm−2) were investigated using high-resolution triple axis diffractometry. We determined that a significant amount of carbon occupied substitutional sites after rapid thermal annealing only when gallium was co-implanted. The carbon in the carbon-implanted layer remained in nonsubstitutional sites after annealing. In both cases, most of the lattice strain in the implanted layer decreases upon annealing, but a defective crystalline structure with an extensive mosaic spread evolves. Conventional double-axis x-ray measurements were employed for comparison.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
