Abstract
Abstract We investigated strain relaxation in (001) InGaAs/GaAs structures using both double and triple axis high resolution x-ray diffraction techniques. We determined diat broadening which is observed in double axis scans stews pnmanly from mosaic spread and not from lattice constant variations in the layer, demonstrating that relaxation is uniform along the growth direction. These observations held for layers with both low and high indium content and extents of relaxation. Triple axis measurements showed that the peak broadening was due exclusively to mosaic spread for the low indium content samples and also confirmed earlier double axis measurements that a crystallographic tilt of the epitaxial layer was attributed to substrate miscut. The ability to distinguish the source of peak broadening and crystallographic tilts makes triple axis diffraction a powerful characterization technique for the study of mismatched epitaxial layers.
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