Strain analysis of highly scalable single InAs/InP quantum dots in a stress-sensitive environment

Abstract

We perform an experimental and computational study of the effects of external stress and intermixing on single site-selected InAs/InP quantum dots in a highly scalable stress-sensitive environment. While such effects are well known for their ability to tune emission spectra, little is known on how they influence emission shell spacing, electron-hole effective mass renormalization, and the physical size of the embedded quantum dot, which are all important parameters affecting the intended functionality. We show excellent agreement between experiment and finite-element solutions of the coupled Navier and Schrödinger equations, including recent atomistic pseudopotential calculations in the literature. These results indicate that using single self-assembled quantum dots in highly scalable, stress-sensitive settings as active elements in future bottom-up nanosystems offers greater versatility to not only quantum information systems where they serve as scalable single-photon sources but also to ultra-sensing capabilities in future nano-electro-mechanical architectures.