Storage moduli, loss moduli and damping factor of GaAs and Ga1−xMnxAs thin films using DMA 2980

Abstract

The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1−xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45°C≤T≤70°C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs ≤20% allow damping at temperature range of 45°C≤T≤70°C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1−xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1−xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1−xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45°C≤T≤70°C. Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature.