Stopping power of 100–600 keV F +, Ar +, As +, Br + and Xe + ions in silicon

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The stopping power of 100–600 keV F +, Ar +, As +, Br + and Xe + ions in silicon have been obtained from measured range distribution obtained by NRA and RBS techniques. A deconvolution program was used in order to obtain true range distributions from the measured NRA excitation curves or RBS spectra. The total stopping powers were determined through fitting the projected ranges based on LSS transport theory to the experimentally determined projected ranges. After subtracting calculated nuclear stopping cross sections, the electronic stopping cross sections were obtained. These results indicate that the electronic stopping cross sections at low velocities may be described by the four-parameter formulae proposed previously and that deviation from the velocity-proportional electronic stopping is evident.