Abstract

A monopolar GaAs Fabry-Perot cavity laser based on the Gunn effect is demonstrated. The optical intensity of the edge emission is 30 watt/cm' at an applied electric field of 4.4 kV/cm. The n type GaAs active layer (n=5×10 1 7 cm - 3 ), placed in a wave-guide has a longitudinal cavity length of 213-226 μm. Excess carriers are produced by impact ionization within the propagating space charge (Gunn) domains. The electroluminescence spectra show a strong dependence on the number of domains in transit. The growth of the lasing mode coincides with the increase of the accumulation density of excess carriers in the Gunn device.

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