Abstract
A monopolar GaAs Fabry–Pérot cavity laser based on the Gunn effect is studied both experimentally and theoretically. The light emission occurs via the band-to-band recombination of impact-ionized excess carriers in the propagating space-charge (Gunn) domains. Electroluminescence spectrum from the cleaved end-facet emission of devices with Ga1−xAlxAs (x=0.32) waveguides shows clearly a preferential mode at a wavelength around 840 nm at T=95 K. The threshold laser gain is assessed by using an impact ionization coefficient resulting from excess carriers inside the high-field domain.
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