Abstract
Stimulated emission in homoepitaxial GaN layers was studied by measuring luminescence spectra in backward and lateral configurations at room temperature. The dynamics of the spectra was investigated under excitation of carriers with different excess energies and by changing the excitation intensity. Two bands of stimulated emission caused by recombination in electron-hole plasma at the sample surface and in the dense exciton system located deeper in the layer were simultaneously observed. This is explained by large diffusion lengths for carriers (excitons) and low density of structural defects and cracks. Influence of carrier heating on the stimulated emission is demonstrated.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
