Abstract
Stimulated emission under quasi-resonant photoexcitation was studied in high-quality homoepitaxial GaN layers. Emission escaping perpendicular to the excited surface as well as propagating along the surface was analyzed as a function of the excitation power density in the temperature range from 8 to $600\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Contributions of stimulated emission due to inelastic exciton\char21{}exciton/carrier interaction and recombination in electron-hole plasma (EHP) were revealed and simultaneously observed from the sample edge. The concurrent action of two mechanisms of stimulated emission was interpreted to be caused mainly by spatially inhomogeneous Mott transition due to separation of EHP located at the very surface of the layer and dense exciton gas located deeper in the layer. The separation is facilitated by high carrier diffusion length in homoepitaxial GaN. Stimulated emission due to inelastic exciton\char21{}exciton/carrier interaction was unambiguously traced up to the temperature of $440\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.
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