Abstract
In this work, Tungsten Disulfide (WS2) is used as absorber layer with Indium Telluride (In2Te3) as hole transport layer and a comparison is made between the devices without and with hole transport layer. Analysis is carried out by varying thickness of WS2, Acceptor concentration of WS2, Interface defects, Temperature, Surface recombination velocities, Series and Shunt Resistances. It is observed that by introducing hole transport layer of Indium Telluride, carrier recombination losses can be restricted and the power conversion efficiency of proposed solar cell can be raised significantly. The efficiency of Tungsten Disulfide absorber layer based solar cell is 23.13% when hole transport layer is not inserted, whereas by incorporating a hole transport layer of Indium Telluride, it is increased to 25.37%. SCAPS-1D is used for simulation of the model.
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