Simulation Engineering of Heterojunction Colloidal Quantum Dot- Solar Cell Using Tungsten Trioxide (WO3) as an Electron Transport Layer

Abstract

AbstractQuantum dot solar cell is one of the most potential third generation solar cell due to some peculiar properties of quantum dots like size and composition tunability. Despite of these properties, the colloidal quantum dot solar cell (CQDSCs) performance is still lagging behind conventional solar cells because of the phenomenon of recombination of carriers in quasi-neutral region (QNR). The solar cell device performance is highly dependent on the choice of electron transport layer (ETL) and hole transport layer (HTL). In the present work, WO3 is used as ETL and Cu2O is used as HTL, tetrabutylammonium iodide treated PbS (PbS-TBAI) is used as absorber layer. All simulation work is done by using SCAPS-1D simulator program. The obtained power conversion efficiency (PCE) of the present solar cell device structure is 16.32%. This device is then optimized by varying the doping density of ETL and HTL and 5 × 1017 cm−3 is finalized for both ETL and HTL. Further, the investigation of series and shunt resistance is performed. The optimized values for series and shunt resistance are 1 and 1 × 106 Ω cm2 respectively. The optimized value of the PCE is obtained as 18.07%.KeywordsColloidal quantum dot solar cells (CQDSCs)Transparent conductive electrode (TCE)Electron transport layer (ETL)Hole transport layer (HTL)Power conversion efficiency (PCE)Indium doped tin oxide (ITO)