Abstract
Step edge structures on H-terminated Si (112) and (113) surfaces have been investigated with infrared absorption spectroscopy. NH4F acid is used to prepare almost straight bilayer step edges on the surfaces. It has been found that the step edges with the dihydride fluctuate within the width of one row of Si–H oscillators. The reason for the fluctuation is attributed to the etching of Si atoms of straight step edges during NH4F treatment. The assignment of C mode absorption has been refined based on our experimental result. Therein, the surface orientation dependence of the absorption spectra is quantitatively investigated by taking account of the effect of step fluctuation. The ratio of actually fluctuating step edges to original step edges is estimated.
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