Abstract
We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22V and a maximum photosensistivity of 2.65×103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.
Published Version
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