Abstract
Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic devices for computing and data storage, but also for emerging technologies such as related to the internet-of-things, artificial intelligence, and quantum computing. To this end, strong interest in improving nanoscale fabrication techniques such as atomic layer deposition (ALD) has been present. New ALD processes are being sought continuously and particularly plasma-assisted processes are considered an enabler for a wide range of applications because of their enhanced reactivity. This review provides an update on the status and prospects of plasma-assisted ALD with a focus on the developments since the publication of the review by Profijt et al. [J. Vac. Sci. Technol. A 29, 050801 (2011)]. In the past few years, plasma ALD has obtained a prominent position in the field of ALD with (i) a strong application base as demonstrated by the breakthrough in high-volume manufacturing; (ii) a large number of established processes, out of which several are being enabled by the plasma step; and (iii) a wide range of plasma ALD reactor designs, demonstrating many methods by which plasma species can be applied in ALD processes. In addition, new fundamental insights have been obtained, for instance, with respect to plasma damage, on the effect of ions on the material properties and on the so-called redeposition effect. Regarding new and emerging developments, plasma ALD is expected to take a prominent position in the atomic-scale processing toolbox and will contribute to ongoing developments in area-selective deposition, controlled growth of 2D materials, and atomic layer etching.
Highlights
To allow the continuous miniaturization of devices, there is a strong drive for processing of materials at the atomic scale
Atomic-scale processing allows for precise interface engineering and utilization of nanoscale effects, i.e., effects where material properties are markedly different at the nanoscale compared to those for the bulk.[7]
Besides classical nanoscale effects, quantum effects have gathered a lot of attention since they bring the promise of quantum computing and the profound implications and applications associated with it
Summary
To allow the continuous miniaturization of devices, there is a strong drive for processing of materials at the atomic scale. Atomic layer deposition (ALD) is one processing technique that has been widely adopted for the growth of nanometer-scale films of a variety of materials.[10–12]. Due to this research effort, many materials can be deposited by ALD nowadays, as shown in the periodic table diagrams of Fig. 1 Many of these are not ideal ALD processes or have limited temperature windows. Plasma ALD and related methods are expected to be a prominent part of atomic-scale processing techniques envisaged for emerging developments. The review paper by Profijt et al gave an overview and discussion around the basics, opportunities, and challenges for plasma ALD present at that time.[13] In this follow-up review, we will describe the status and prospects of plasma-assisted atomic layer deposition, where the focus will lie on new developments since the publication of the paper by Profijt et al.[13]. The aim is to provide a focused overview of the status of plasma ALD and the challenges and opportunities ahead
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