Abstract
Scanning capacitance microscopy (SCM) is a variation of atomic force microscopy (AFM) based techniques. SCM has been used to characterize two-dimensional electric properties in semiconductor devices, such as the free carrier distribution. We have demonstrated quantitative analysis of the estimated carrier concentration using statistically derived correlation functions with SCM signals. It was also applied to silicon carbide (SiC) materials as well as the conventional measurements for silicon devices. The statistical method does not require transforming the signals into physical quantities and is applicable to other next-generation AFM based techniques.
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